Diffusion properties of point defects in barium strontium titanate thin films

Author

Morito, Kentaro ; Suzuki, Toshimasa ; Kishi, Hiroshi ; Sakaguchi, Isao ; Ohashi, Naoki ; Haneda, Hajime

Author_Institution

Nat. Inst. for Mater. Sci., Ibaraki

Volume

54

Issue

12

fYear

2007

fDate

12/1/2007 12:00:00 AM

Firstpage

2567

Lastpage

2573

Abstract

The relationship between the diffusion behavior of hydrogen and the electrical properties of (Ba, Sr)TiO₃ (BST) thin-film capacitors was investigated using thermal desorption spectroscopy and secondary ion mass spectroscopy analyses. It has been clearly shown that the frequency dependence of the complex impedance profile of the BST thin-film capacitors could be successfully represented by two parallel resistor-capacitor (RC) electrical equivalent networks in series correlated with the distribution of the hydrogen, namely, the Pt/BST interface region with the influence of hydrogen and the BST bulk region without the influence of hydrogen. However, the I-V properties of the BST thin-film capacitors could be determined almost from the hydrogen atoms existing at the Pt/BST interface.

Keywords

barium compounds; diffusion; point defects; secondary ion mass spectra; strontium compounds; thin film capacitors; BaTiO₃-SrTiO₃; Diffusion; I-V properties; Point Defects; parallel resistor-capacitor electrical equivalent networks; secondary ion mass spectroscopy; thermal desorption spectroscopy; thin-film capacitors; Barium; Binary search trees; Capacitors; Frequency dependence; Hydrogen; Impedance; Mass spectroscopy; Strontium; Titanium compounds; Transistors;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/TUFFC.2007.578

Filename

4430042