DocumentCode
1034492
Title
A slide rule for computing UF and the bulk doping from MIS-capacitor high-frequency C-V curves
Author
Pierret, R.F. ; Sah, C.T.
Volume
16
Issue
1
fYear
1969
fDate
1/1/1969 12:00:00 AM
Firstpage
140
Lastpage
147
Abstract
A slide rule has been developed for the rapid and accurate calculation of the normalized doping parameter UF and the bulk doping of silicon substrates from high-frequency MIS-capacitor 
data. The slide rule can be employed for ambient temperatures from -20 to 100°C, and for a wide range of insulator thicknesses and dielectric constants.
data. The slide rule can be employed for ambient temperatures from -20 to 100°C, and for a wide range of insulator thicknesses and dielectric constants.Keywords
Capacitance; Capacitance-voltage characteristics; Dielectric constant; Dielectric substrates; Dielectrics and electrical insulation; Permittivity; Semiconductor device doping; Silicon; Temperature dependence; Temperature distribution;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1969.16576
Filename
1475619
Link To Document