DocumentCode
1034576
Title
Hot-spot thermal resistance in transistors
Author
Reich, Bernard ; Hakim, Edward B.
Author_Institution
U. S. Army Electronics Command, Fort Monmouth, N. J.
Volume
16
Issue
2
fYear
1969
fDate
2/1/1969 12:00:00 AM
Firstpage
166
Lastpage
170
Abstract
By the application of an infrared radiometer as the sensor, hot-spot formation is detected and a hot-spot thermal resistance is calculated. Hot-spot formation for both forward- and reverse-biased second breakdown is analyzed. Pulsed dc techniques are used in the investigation, allowing a wide range of possible operating biases to be applied.
Keywords
Circuits; Electric breakdown; Electric resistance; Electrical resistance measurement; Infrared detectors; Infrared sensors; Pulse measurements; Pulsed power supplies; Thermal resistance; Thermal sensors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1969.16585
Filename
1475627
Link To Document