DocumentCode :
1035120
Title :
Characteristics of Hebbian-type associative memories with quantized interconnections
Author :
Chung, Pau-Choo ; Tsai, Ching-Tsorng ; Sun, Yung-Nien
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
41
Issue :
2
fYear :
1994
fDate :
2/1/1994 12:00:00 AM
Firstpage :
168
Lastpage :
171
Abstract :
The effects of quantized Hebbian-type associative memories (HAM´s) on storage capacity and hardware implementations are explored in this paper. The quantizations include a two-level strategy and a three-level strategy using a cutoff threshold in which the interconnection weights of both strategies are restricted to binary memory points on each synapse. The restricted interconnection weights enable a digital or an analog HAM to be implemented more space efficiently. The three-level quantized network with sparse connectivity among neurons has further simplified analog circuits in the dedicated hardwares. Results of simulation and theory show that the three-level quantized network with a properly selected cutoff threshold possesses higher storage capacity than the two-level quantized network
Keywords :
Hebbian learning; Monte Carlo methods; analogue storage; analogue-digital conversion; content-addressable storage; Hebbian-type associative memories; Monte Carlo simulation; analog HAM; binary memory points; cutoff threshold; digital HAM; hardware implementation; interconnection weights; quantized interconnections; simulation; sparse connectivity; storage capacity; synaptic weights; three-level strategy; two-level strategy; Analog circuits; Associative memory; Circuit simulation; Equations; Hardware; Integrated circuit interconnections; Neurodynamics; Neurons; Quantization; Sun;
fLanguage :
English
Journal_Title :
Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on
Publisher :
ieee
ISSN :
1057-7122
Type :
jour
DOI :
10.1109/81.269054
Filename :
269054
Link To Document :
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