Title :
Effect of photochemical etching on interface state density of Ga0.47In0.53As metal/insulator/semiconductor diodes
Author :
Aoki, A. ; Miyoshi, S. ; Shirafuji, J.
Author_Institution :
Osaka University, Department of Electrical Engineering, Faculty of Engineering, Suita, Japan
Abstract :
A metal/insulator/semiconductor (MIS) structure of Ga0.47In0.53As has been prepared by applying an excimer laser photo-CVD process to depositing an SiNx insulating layer. It is found that interface state densities can be remarkably reduced by in situ photochemical etching with CC14 or CH3Br gases prior to SiNx deposition. A minimum value of the U-shape profile of the interface state density as low as 5 × 1011 cm-2eV-1is attained.
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; metal-insulator-semiconductor structures; semiconductor technology; Ga0.47In0.53As; MIS structure; SiNx deposition; SiNx film; bromomethane; excimer laser photo-CVD process; in situ photochemical etching; interface state density; tetrachloromethane;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870630
