DocumentCode
1035600
Title
Design and AC characteristics of silicon MOS hall elements
Author
Gallagher, R. ; Corak, W.
Author_Institution
Westinghouse Electric Corporation, Baltimore, Md
Volume
3
Issue
3
fYear
1967
fDate
9/1/1967 12:00:00 AM
Firstpage
380
Lastpage
380
Keywords
Hall effect devices; Semiconductor devices; Circuits; Electrons; Fabrication; Hall effect; MOSFETs; Radiative recombination; Resistors; Silicon; Spontaneous emission; Threshold voltage;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1967.1066081
Filename
1066081
Link To Document