• DocumentCode
    1035643
  • Title

    Long-wavelength PINFET receiver OEIC on a GaAs-on-InP heterostructure

  • Author

    Suzuki, A. ; Itoh, Takayuki ; Terakado, T. ; Kasahara, K. ; Asano, Katsunori ; Inomoto, Y. ; Ishihara, H. ; Torikai, T. ; Fujita, S.

  • Author_Institution
    NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
  • Volume
    23
  • Issue
    18
  • fYear
    1987
  • Firstpage
    954
  • Lastpage
    955
  • Abstract
    A long-wavelength PINFET OEIC has been fabricated on a GaAs-on-InP heterostructure for the first time. A receiver sensitivity as high as ¿31 dBm for 600Mbit/s NRZ has been obtained. The great potential of the GaAs-on-InP hetero-structure for high-performance, long-wavelength OEIC applications has been demonstrated.
  • Keywords
    III-V semiconductors; integrated optoelectronics; optical communication equipment; 600 Mbit/s; GaAs-InP; NRZ; long-wavelength PINFET OEIC; receiver sensitivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870671
  • Filename
    4258010