DocumentCode
1035643
Title
Long-wavelength PINFET receiver OEIC on a GaAs-on-InP heterostructure
Author
Suzuki, A. ; Itoh, Takayuki ; Terakado, T. ; Kasahara, K. ; Asano, Katsunori ; Inomoto, Y. ; Ishihara, H. ; Torikai, T. ; Fujita, S.
Author_Institution
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Volume
23
Issue
18
fYear
1987
Firstpage
954
Lastpage
955
Abstract
A long-wavelength PINFET OEIC has been fabricated on a GaAs-on-InP heterostructure for the first time. A receiver sensitivity as high as ¿31 dBm for 600Mbit/s NRZ has been obtained. The great potential of the GaAs-on-InP hetero-structure for high-performance, long-wavelength OEIC applications has been demonstrated.
Keywords
III-V semiconductors; integrated optoelectronics; optical communication equipment; 600 Mbit/s; GaAs-InP; NRZ; long-wavelength PINFET OEIC; receiver sensitivity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870671
Filename
4258010
Link To Document