• DocumentCode
    1035871
  • Title

    Type conversion in CdxHg1-xTe by ion beam treatment

  • Author

    Blackman, M.V. ; Charlton, D.E. ; Jenner, M.D. ; Purdy, D.R. ; Wotherspoon, J.T.M. ; Elliott, C.T. ; White, Amanda M.

  • Author_Institution
    Mullard Limited, Southampton, UK
  • Volume
    23
  • Issue
    19
  • fYear
    1987
  • Firstpage
    978
  • Lastpage
    979
  • Abstract
    Conversion of vacancy-doped p-type cadmium mercury telluride to n-type by rapid diffusion of mercury interstitials created during ion bombardment is rate-limited by the dose and requires neither donor ions nor postannealing.
  • Keywords
    II-VI semiconductors; cadmium compounds; ion beam applications; ion beam effects; mercury compounds; p-n homojunctions; photodiodes; semiconductor doping; Ar ion beam; CdxHg1-xTe; Hg rapid diffusion; ion beam treatment; ion bombardment; photodiodes; rate-limited; type conversion;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870687
  • Filename
    4258756
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1035871