Title :
Fully ion-implanted abrupt pn junction on semi-insulating InP
Author :
Wang, Ke-Wei ; Cheng, C.L. ; Zima, S.M.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Abstract :
We report a fully ion-implanted pn junction using Si for n-implant and P/Be co-implant for a shallow p+ surface layer. C/V measurements indicate abrupt junction behaviour. Mesa diodes were fabricated and showed an ideality factor of two, small leakage current and avalanche breakdown at reverse bias greater than 40 V.
Keywords :
III-V semiconductors; indium compounds; ion implantation; p-n homojunctions; semiconductor diodes; C-V measurements; III-V semiconductor; InP; InP:P,Be-InP:Si; avalanche breakdown; ideality factor; ion implanted abrupt p-n junction; leakage current; mesa diodes; shallow p+ surface layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870727
