Title :
Novel vertical Hall cells in standard bipolar technology
Author :
Maenaka, K. ; Ohgusu, T. ; Ishida, M. ; Nakamura, T.
Author_Institution :
Toyohashi University of Technology, Department of Electrical and Electronic Engineering, Toyohashi, Japan
Abstract :
Novel vertical Hall cells which detect the magnetic field parallel to the chip surface were developed using the standard bipolar technology. In the devices, an n+ buried layer makes a vertical current flow and introduces the sensitivity parallel to the chip surface. A sensitivity of 75 V/AT was measured.
Keywords :
Hall effect devices; magnetic field; sensitivity; standard bipolar technology; vertical Hall cells; vertical current flow;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870770
