DocumentCode :
1037063
Title :
Charge control approach to the small signal theory of field-effect devices
Author :
Huang, T. J S
Author_Institution :
Solid State Electronics Center, Honeywell Inc., Plymouth, Minn.
Volume :
16
Issue :
9
fYear :
1969
fDate :
9/1/1969 12:00:00 AM
Firstpage :
775
Lastpage :
781
Abstract :
The operation of a field-effect device is described in terms of the total charge in the channel region. The analysis is primarily developed for the small-signal operation for which the charge control equations are linear and have constant coefficients. The complete expressions for the small signal admittance parameters are obtained in both the linear and the pinch-off regions leading directly to equivalent circuits. It is believed that the charge control approach not only simplifies the mathematics involved, but provides new insights into device operation as well.
Keywords :
Admittance; Bipolar transistors; Differential equations; Electrical capacitance tomography; Equivalent circuits; Geometry; Insulation; Integral equations; Mathematics; Voltage control;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1969.16853
Filename :
1475895
Link To Document :
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