• DocumentCode
    1037066
  • Title

    GaAs/AlGaAs rooftop reflector laser for optoelectronic integrated circuits

  • Author

    Chang-Joon Chae ; Young-Se Kwon

  • Author_Institution
    Korea Advanced Institute of Science & Technology, Department of Electrical Engineering, Seoul, Korea
  • Volume
    23
  • Issue
    21
  • fYear
    1987
  • Firstpage
    1118
  • Lastpage
    1120
  • Abstract
    A GaAs/AlGaAs laser, consisting of a cleaved facet and a chemically etched total-internal-reflecting rooftop reflector, is fabricated and tested. The results show that the rooftop reflector with the reflectivity exceeding 0.9 can be readily obtained and the laser is suitable for optoelectronic integrated circuits.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; semiconductor junction lasers; GaAs-AlGaAs; cleaved facet; optoelectronic integrated circuits; rooftop reflector laser; semiconductor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870780
  • Filename
    4259018
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1037066