Title :
High-performance millimetre-wave GaAs power MESFET prepared by gas source molecular beam epitaxy
Author :
Shih, H.D. ; Kim, Bumki ; Wurtele, M.
Author_Institution :
Texas Instruments Incorporated, Central Research Laboratories, Dallas, USA
Abstract :
A state-of-the-art GaAs power MESFET prepared by gas source molecular beam epitaxy is described. The device showed DC transconductance of 180mS/mm and generated power density of 0¿6W/mm at 35 GHz, with 5dB gain and 28% power-added efficiency.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; molecular beam epitaxial growth; power transistors; solid-state microwave circuits; 0.6 W/mm; 180 mS/mm; 35 GHz; 5 dB; DC transconductance; GaAs; gas source molecular beam epitaxy; millimetre-wave GaAs power MESFET; power density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870795
