DocumentCode :
1038016
Title :
The theory of the interaction of drifting carriers in a semiconductor with external traveling-wave circuits
Author :
Ettenberg, Morris ; Nadan, Joseph S.
Author_Institution :
City College of the City University of New York, N.Y.
Volume :
17
Issue :
3
fYear :
1970
fDate :
3/1/1970 12:00:00 AM
Firstpage :
219
Lastpage :
223
Abstract :
The interaction between slow electromagnetic waves and drifting carriers in a semiconductor is analyzed including mechanisms important and peculiar to the semiconductor device. The growth rate coefficients, excitation amplitudes, and phase are found using a modification of Pierce´s one-dimensional model of the traveling-wave tube. A technique for calculating a growing mode criterion is presented.
Keywords :
Admittance; Ash; Charge carriers; Circuits; Cities and towns; Electron beams; Electron tubes; Equations; Radio frequency; Semiconductor optical amplifiers;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1970.16957
Filename :
1476141
Link To Document :
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