Title :
MOSFET model continuous from weak to strong inversion
Author :
Abu-Zeid, M.M. ; de Jong, G.G.
Author_Institution :
Eindhoven University of Technology, Eindhoven, Netherlands
Abstract :
A simple analytical model is proposed for long-channel MOSFETs. The model describes MOSFET operation in all regions from weak to strong inversion by a single exponential equation. This makes its implementation in CAD easy and time-saving. Predicted and experimental data are in good agreement.
Keywords :
insulated gate field effect transistors; semiconductor device models; CAD; MOSFET model; exponential equation; long-channel MOSFETs; strong inversion;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870899
