DocumentCode :
1038393
Title :
Diode edge effect on doping-profile measurements
Author :
Copeland, John A.
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
Volume :
17
Issue :
5
fYear :
1970
fDate :
5/1/1970 12:00:00 AM
Firstpage :
404
Lastpage :
407
Abstract :
Diode edge effects can be a source of error in doping profile measurements made by the capacity versus voltage technique or CIP technique. A numerical calculation indicates that for uniform doping the apparent doping will be higher than the actual doping by a factor of 
where 
and 
is the ratio of depth 
to diode radius 
. Comparison with other sources of error shows that edge-effect error will be the largest error when the diode diameter is greater than 10 mils (250 µm) because this error decreases at the slowest rate as the diameter increases (as the reciprocal of the diameter rather than the reciprocal of the diameter squared).
where and is the ratio of depth to diode radius . Comparison with other sources of error shows that edge-effect error will be the largest error when the diode diameter is greater than 10 mils (250 µm) because this error decreases at the slowest rate as the diameter increases (as the reciprocal of the diameter rather than the reciprocal of the diameter squared).Keywords :
Capacitance; Current measurement; Density measurement; Doping profiles; Radio frequency; Schottky diodes; Semiconductor diodes; Semiconductor process modeling; Telephony; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1970.16996
Filename :
1476180
Link To Document :
