DocumentCode
1038726
Title
Small-signal high-frequency response of the insulated-gate field-effect transistor
Author
Cherry, E.M.
Author_Institution
Monash University, Clayton, Victoria, Australia
Volume
17
Issue
8
fYear
1970
fDate
8/1/1970 12:00:00 AM
Firstpage
569
Lastpage
577
Abstract
A complete solution is presented for the small-signal high-frequency response of an idealized model of the insulated-gate field-effect transistor. The 
parameters are found by solving Bessel\´s equation and are plotted as functions of signal frequency and the quiescent conditions. In addition to these general results, simple approximate results that apply only beyond the point of pinch-off are derived for operation at moderately low frequencies.
parameters are found by solving Bessel\´s equation and are plotted as functions of signal frequency and the quiescent conditions. In addition to these general results, simple approximate results that apply only beyond the point of pinch-off are derived for operation at moderately low frequencies.Keywords
Differential equations; Electrical capacitance tomography; Electrical resistance measurement; Electron tubes; Equivalent circuits; FETs; Frequency; Helium; Insulation; Vacuum technology;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1970.17033
Filename
1476217
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