DocumentCode :
1040110
Title :
A small-signal calculation for one-dimensional transistors
Author :
Kurata, Mamoru
Author_Institution :
Tokyo Shibaura Electric Company, Ltd., Kawasaki, Japan
Volume :
18
Issue :
3
fYear :
1971
fDate :
3/1/1971 12:00:00 AM
Firstpage :
200
Lastpage :
210
Abstract :
A computation method to obtain an exact small-signal solution of a one-dimensional transistor model for high-frequency operation is presented under the assumption of negligible bulk recombination effect. Basis for the small-signal calculation is 1) a dc solution at the operating point under consideration, 2) trial potentials (electrostatic potential and quasi-Fermi potentials for electrons and holes, respectively), and 3) frequency. A scheme for iterative computation can be constructed in a manner similar to that for dc steady state given by Gummel. Discussions are made on conservation of the total currents, terminal currents relationship, as on a simplified method to obtain terminal characteristics. Some computation results will be demonstrated for potentials, carrier densities, current densities, and the current transfer factor. In the Appendix the relation between the exact solution and low-frequency treatment will be discussed.
Keywords :
Application software; Boundary conditions; Charge carrier density; Charge carrier processes; Design automation; Electrostatics; Equations; Frequency; Steady-state; Thumb;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1971.17174
Filename :
1476496
Link To Document :
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