Degradation of silicon AC-coupled microstrip detectors induced by radiation

Author

Bacchetta, N. ; Bisello, D. ; Canali, C. ; Fuochi, P.G. ; Gotra, Yu ; Paccagnella, A. ; Verzellesi, G.

Author_Institution

INFN, Sezione di Padova, Italy

Volume

40

Issue

6

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

2001

Lastpage

2007

Abstract

Results are presented showing the radiation response of AC-coupled FOXFET biased microstrip detectors and related test patterns to be used in the microvertex detector of the CDF experiment at Fermi National Laboratory. Radiation tolerance of detectors to gamma and proton irradiation has been tested, and the radiation-induced variations of the DC electrical parameters have been analyzed. The long-term postirradiation behavior of detector characteristics has been studied, and the relevant room-temperature annealing phenomena have been examined. The main radiation damage effects after gamma or proton irradiation of FOXFET biased microstrip detectors consist of an increase in the total leakage current, while both the detector dynamic resistance and FOXFET switching voltage decrease

Keywords

gamma-ray effects; proton effects; semiconductor counters; silicon; AC-coupled FOXFET biased microstrip detectors; AC-coupled microstrip detectors; CDF experiment; DC electrical parameters; FOXFET switching voltage decrease; Si; detector dynamic resistance; long-term postirradiation; microvertex detector; proton irradiation; radiation response; room-temperature annealing phenomena; total leakage current; Degradation; Gamma ray detection; Gamma ray detectors; Laboratories; Leak detection; Microstrip; Protons; Radiation detectors; Silicon; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.273452

Filename

273452