Title :
Temperature dependent GaAs MMIC radiation effects
Author :
Anderson, W.T. ; Gerdes, J. ; Roussos, J.A.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
fDate :
12/1/1993 12:00:00 AM
Abstract :
The temperature dependence of pulsed neutron and flash X-ray radiation effects was studied in GaAs MMICs (monolithic microwave integrated circuits). Above room temperature the long-term current transients are dominated by electron trapping in previously existing defects. At low temperatures in the range 126 to 259 K, neutron-induced lattice damage appears to play an increasingly important role in producing long-term current transients
Keywords :
III-V semiconductors; MMIC; X-ray effects; electron traps; gallium arsenide; integrated circuit testing; neutron effects; transients; -147 to 150 degC; GaAs; GaAs MMICs; electron trapping; flash X-ray irradiation; long-term current transients; neutron-induced lattice damage; pulsed neutron irradiation; temperature dependence; Electron traps; Gallium arsenide; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Neutrons; Pulse circuits; Radiation effects; Temperature dependence; Temperature distribution;
Journal_Title :
Nuclear Science, IEEE Transactions on
