A Novel a-InGaZnO TFT Pixel Circuit for AMOLED Display With the Enhanced Reliability and Aperture Ratio

Author

Yeonkyung Kim ; Yongchan Kim ; Hojin Lee

Author_Institution

MEMS Display & Sensor Lab., Soongsil Univ., Seoul, South Korea

Volume

10

Issue

1

fYear

2014

fDate

Jan. 2014

Firstpage

80

Lastpage

83

Abstract

In this paper, a novel voltage-programmed pixel circuit based on amorphous indium-gallium-zinc-oxide thin film transistor (a-InGaZnO TFT) for active-matrix organic light-emitting diode (AMOLED) displays with the enhanced aperture ratio is proposed. The proposed circuit consists of 5 TFTs and one capacitor. Through extensive simulation and layout works, we verified the proposed circuit compensates for the variation of the threshold voltage in a variety of harsh stress conditions. In addition, by removing one storage capacitor and one signal line, the proposed circuit can increase the aperture ratio as well as decrease the complexity of circuit operation in comparison to the conventional pixel circuit.

Keywords

II-VI semiconductors; amorphous semiconductors; capacitors; circuit reliability; compensation; gallium compounds; indium compounds; organic light emitting diodes; thin film transistors; wide band gap semiconductors; zinc compounds; AMOLED display; TFT pixel circuit; active matrix organic light emitting diode; enhanced aperture ratio; enhanced reliability; harsh stress condition; signal line; storage capacitor; thin film transistor; threshold voltage variation compensation; voltage programmed pixel circuit; Active matrix organic light emitting diodes; Capacitors; Logic gates; Stress; Thin film transistors; Threshold voltage; Active-matrix organic light-emitting diode (AMOLED); a-InGaZnO TFT; oxide; voltage-programmed pixel circuit;

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2013.2280026

Filename

6587793