Title :
A Novel a-InGaZnO TFT Pixel Circuit for AMOLED Display With the Enhanced Reliability and Aperture Ratio
Author :
Yeonkyung Kim ; Yongchan Kim ; Hojin Lee
Author_Institution :
MEMS Display & Sensor Lab., Soongsil Univ., Seoul, South Korea
Abstract :
In this paper, a novel voltage-programmed pixel circuit based on amorphous indium-gallium-zinc-oxide thin film transistor (a-InGaZnO TFT) for active-matrix organic light-emitting diode (AMOLED) displays with the enhanced aperture ratio is proposed. The proposed circuit consists of 5 TFTs and one capacitor. Through extensive simulation and layout works, we verified the proposed circuit compensates for the variation of the threshold voltage in a variety of harsh stress conditions. In addition, by removing one storage capacitor and one signal line, the proposed circuit can increase the aperture ratio as well as decrease the complexity of circuit operation in comparison to the conventional pixel circuit.
Keywords :
II-VI semiconductors; amorphous semiconductors; capacitors; circuit reliability; compensation; gallium compounds; indium compounds; organic light emitting diodes; thin film transistors; wide band gap semiconductors; zinc compounds; AMOLED display; TFT pixel circuit; active matrix organic light emitting diode; enhanced aperture ratio; enhanced reliability; harsh stress condition; signal line; storage capacitor; thin film transistor; threshold voltage variation compensation; voltage programmed pixel circuit; Active matrix organic light emitting diodes; Capacitors; Logic gates; Stress; Thin film transistors; Threshold voltage; Active-matrix organic light-emitting diode (AMOLED); a-InGaZnO TFT; oxide; voltage-programmed pixel circuit;
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2013.2280026
