Title :
Charge-coupled imaging devices: Design considerations
Author :
Amelio, Gilbert F. ; Bertram, Walter J., Jr. ; Tompsett, Michael F.
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
fDate :
11/1/1971 12:00:00 AM
Abstract :
In this paper some of the parameters relevant to the design of charge-coupled imaging devices are considered. Among these are charge storage capability, transfer efficiency, charge conservation, dark current, and the anticipated signal-to-noise ratio. Each is discussed, and the resultant effects on the performance of imaging devices are investigated.
Keywords :
Charge carrier processes; Dark current; Electrodes; Helium; Insulation; Optical imaging; Potential well; Semiconductor diodes; Signal to noise ratio; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1971.17320
