• DocumentCode
    1041589
  • Title

    The Epiconcamera tube: An epitaxial diode array vidicon

  • Author

    Blumenfeld, S. Morry ; Ellis, George W. ; Redington, Rowland W. ; Wilson, Ronald H.

  • Author_Institution
    General Electric Company, Schenectady, N. Y.
  • Volume
    18
  • Issue
    11
  • fYear
    1971
  • fDate
    11/1/1971 12:00:00 AM
  • Firstpage
    1036
  • Lastpage
    1042
  • Abstract
    The structure and processing of epitaxial silicon diode array targets for vidicon camera tubes are described with emphasis on the way they differ from conventional silicon diode array targets. These targets, called Epiconvidicon targets, are generally similar to other silicon vidicon targets, but have the p-type boron diffused islands replaced by pyramidal or mesa-like structures that extend through the oxide apertures and up and over the oxide. The target is a self-registered conducting cap-type structure and does not require a resistive sea for its operation. It has some additional advantages in its structure and its processing over the other silicon diode array target. A comparison of the results of some selective epitaxy processes is briefly made. Some of the operating characteristics of the tube are described.
  • Keywords
    Apertures; Boron; Cameras; Cathodes; Diodes; Epitaxial growth; Fabrication; Helium; Silicon; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1971.17328
  • Filename
    1476650