DocumentCode
1041589
Title
The Epicon™camera tube: An epitaxial diode array vidicon
Author
Blumenfeld, S. Morry ; Ellis, George W. ; Redington, Rowland W. ; Wilson, Ronald H.
Author_Institution
General Electric Company, Schenectady, N. Y.
Volume
18
Issue
11
fYear
1971
fDate
11/1/1971 12:00:00 AM
Firstpage
1036
Lastpage
1042
Abstract
The structure and processing of epitaxial silicon diode array targets for vidicon camera tubes are described with emphasis on the way they differ from conventional silicon diode array targets. These targets, called Epicon™vidicon targets, are generally similar to other silicon vidicon targets, but have the p-type boron diffused islands replaced by pyramidal or mesa-like structures that extend through the oxide apertures and up and over the oxide. The target is a self-registered conducting cap-type structure and does not require a resistive sea for its operation. It has some additional advantages in its structure and its processing over the other silicon diode array target. A comparison of the results of some selective epitaxy processes is briefly made. Some of the operating characteristics of the tube are described.
Keywords
Apertures; Boron; Cameras; Cathodes; Diodes; Epitaxial growth; Fabrication; Helium; Silicon; Substrates;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1971.17328
Filename
1476650
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