• DocumentCode
    1041850
  • Title

    A composite model for Schottky diode barrier height

  • Author

    Eimers, G.W. ; Stevens, E.H.

  • Volume
    18
  • Issue
    12
  • fYear
    1971
  • fDate
    12/1/1971 12:00:00 AM
  • Firstpage
    1185
  • Lastpage
    1186
  • Abstract
    A composite model, which includes both electrostatic screening and an interfacial region, is developed for Schottky diode barrier height. The model is used to calculate barrier height as a function of donor concentration for a gold-on-silicon diode structure. The results show that the influence of electrostatic screening on the barrier height is small and that the barrier height decreases rapidly for donor concentrations greater than 1017cm-3.
  • Keywords
    Boundary conditions; Doping profiles; Electrons; Electrostatics; Gaussian processes; Inspection; Poisson equations; Schottky barriers; Schottky diodes; Semiconductor diodes;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1971.17353
  • Filename
    1476675
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1041850