Molecular hydrogen, E´ center hole traps, and radiation induced interface traps in MOS devices

The authors provide long-sought direct atomic scale evidence for molecular hydrogen reactions at a specific point defect in irradiated thermally-grown SiO₂ films on Si. Using electron spin resonance (ESR), they observe hydrogen interaction at E´ centers in thermal oxides exposed to molecular hydrogen at room temperature. The E´ center is the dominant hole trap in thermally grown SiO₂. The decrease in E´ density occurs on a time scale similar to a comparable increase in density of interface traps. The similarity of the rate of E´ decrease to the rate of interface trap increase, and the approximate agreement between the number of E´ centers and interface traps involved in the two reactions are very strong evidence that E´ centers are involved in the interface trap formation process in radiation and hot-carrier damaged thermally grown SiO₂ on Si