DocumentCode
1042017
Title
Steady-state junction temperatures of semiconductor chips
Author
Lindsted, Robert D. ; Surty, Rohinton J.
Author_Institution
Wichita State University, Wichita, Kans.
Volume
19
Issue
1
fYear
1972
fDate
1/1/1972 12:00:00 AM
Firstpage
41
Lastpage
44
Abstract
The temperature drop between a transistor junction and the base of a silicon chip is dependent upon the power to be dissipated as well as the geometry of the device. This problem in three-dimensional heat conduction is analytically solved for boundary conditions which approximate a set of operating conditions. Nondimensional curves and examples summarizing typical solutions have been included to illustrate problem solving techniques.
Keywords
Boundary conditions; Conductors; Geometry; Helium; Integrated circuit packaging; Problem-solving; Silicon; Steady-state; Temperature dependence; Temperature distribution;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1972.17369
Filename
1476840
Link To Document