Electrical Performance and Reliability Investigation of Cosputtered Cu/Ti Bonded Interconnects

Author

Hsiao-Yu Chen ; Sheng-Yao Hsu ; Kuan-Neng Chen

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

60

Issue

10

fYear

2013

fDate

Oct. 2013

Firstpage

3521

Lastpage

3526

Abstract

Electrical evaluation along with the material analysis and reliability investigation of cosputtered Cu/Ti bonded interconnect in 3-D integration is presented in this paper. Diffusion behavior of cosputtered metals under different bonding ambient is evaluated as well. This paper shows that the bonded structure exhibits several interesting features under atmospheric bonding ambient, including self-formed adhesion layer, Cu-Cu bonding, and Ti oxide sidewall passivation. Electrical and reliability investigations of cosputtered Cu/Ti bonded interconnects show an excellent electrical performance and a high stability under a large variety of reliability tests, indicating the potential of using cosputtered Cu/Ti bonded interconnects for 3-D integration applications.

Keywords

circuit stability; copper; integrated circuit bonding; integrated circuit interconnections; integrated circuit reliability; integrated circuit testing; passivation; sputter deposition; three-dimensional integrated circuits; titanium; 3D integration; Cu-Ti; atmospheric bonding ambient; cosputtered bonded interconnection; cosputtered metal; diffusion behavior; electrical evaluation performance; material analysis; oxide sidewall passivation; reliability testing investigation; self-formed adhesion layer; stability; Annealing; Atomic layer deposition; Bonding; Metals; Reliability; Resistance; Substrates; 3-D integration; bonding technology; cosputtered;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2278396

Filename

6587807