Title :
Ink-Jet-Printed Organic Thin-Film Transistors for Low-Voltage-Driven CMOS Circuits With Solution-Processed AlOX Gate Insulator
Author :
Sung Hoon Kim ; Sun Hee Lee ; Youn Goo Kim ; Jin Jang
Author_Institution :
Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea
Abstract :
We demonstrate low-voltage-driven complementary metal-oxide-semiconductor (CMOS) circuits using ink-jet-printed N, N´ bis-(octyl-) - dicyanoperylene - 3, 4 : 9, 10 - bis(dicarboximide) (PDI8CN2) for the n-channel TFT and 6,13-bis(triisopropylsilyl-ethynyl)pentacene (TIPS-pentacene) for the p-channel TFT with a solution-processed AlOX gate dielectric. The CMOS inverter shows a gain of -95.3 V/V at VDD of 2.5 V, and the ink-jet-printed seven-stage CMOS ring oscillator exhibits an oscillation frequency of 31.8 Hz and a propagation delay time of 2.24 ms/stage at VDD of 4 V.
Keywords :
CMOS analogue integrated circuits; aluminium compounds; ink jet printing; insulators; invertors; thin film transistors; 6,13-bis(triisopropylsilyl-ethynyl)pentacene; 9,10-bis(dicarboximide); AlOX; CMOS inverter; frequency 31.8 Hz; ink-jet-printed N,N´bis-(octyl-)-dicyanoperylene-3,4; ink-jet-printed organic thin-film transistors; low-voltage-driven CMOS circuits; low-voltage-driven complementary metal-oxide-semiconductor circuits; oscillation frequency; p-channel TFT; propagation delay time; solution-processed gate insulator; voltage 2.5 V; voltage 4 V; CMOS integrated circuits; Dielectrics; Inverters; Logic gates; Organic thin film transistors; Complementary metal–oxide–semiconductor (CMOS) integrated circuits; low-voltage; organic semiconductor (OSC); solution process; thin-film transistor (TFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2228461
