DocumentCode
1043091
Title
Performance of Read diodes at K band
Author
Kondo, Atsushi ; Ishii, T.
Author_Institution
Mitsubishi Electric Corporation, Itami, Hyogo, Japan
Volume
19
Issue
5
fYear
1972
fDate
5/1/1972 12:00:00 AM
Firstpage
695
Lastpage
695
Abstract
K-band Read diodes were fabricated with a combination of epitaxial deposition and diffusion process. The diode produced 250 mW at 19.6 GHz with an efficiency of 5.3 percent and two chips mounted diode delivered 410 mW at 17.6 GHz.
Keywords
Boron; Capacitance-voltage characteristics; Conductivity; Diodes; Epitaxial layers; Impurities; Power generation; Radio frequency; Semiconductor device measurement; Substrates;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1972.17480
Filename
1476951
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