Title :
Avalanche breakdown criterion from doping profile integral
Author :
Tantraporn, W. ; Glover, Gary H.
fDate :
5/1/1972 12:00:00 AM
Abstract :
We point out that the area under the measured doping profile curve from the junction to the depth reached at breakdown affords an unambiguous test for "bulk" (as opposed to edge or surface) avalanche breakdown in a p-n or Schottky junction.
Keywords :
Avalanche breakdown; Bonding; Conducting materials; Conductive films; Doping profiles; Electrons; P-n junctions; Space vector pulse width modulation; Temperature; Thermal stresses;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1972.17482
