Title :
Bandwidth enhancement for transimpedance amplifiers
Author :
Analui, Behnam ; Hajimiri, Ali
Author_Institution :
California Inst. of Technol., Pasadena, CA, USA
Abstract :
A technique for bandwidth enhancement of a given amplifier is presented. Adding several interstage passive matching networks enables the control of transfer function and frequency response behavior. Parasitic capacitances of cascaded gain stages are isolated from each other and absorbed into passive networks. A simplified design procedure, using well-known low-pass filter component values, is introduced. To demonstrate the feasibility of the method, a CMOS transimpedance amplifier (TIA) is implemented in a 0.18-μm BiCMOS technology. It achieves 3 dB bandwidth of 9.2 GHz in the presence of a 0.5-pF photodiode capacitance. This corresponds to a bandwidth enhancement ratio of 2.4 over the amplifier without the additional passive networks. The transresistance gain is 54 dBΩ, while drawing 55 mA from a 2.5-V supply. The input sensitivity of the TIA is -18 dBm for a bit error rate of 10-12.
Keywords :
BiCMOS integrated circuits; error statistics; passive networks; wideband amplifiers; 0.18 micron; 0.5 pF; 2.5 V; 55 mA; 9.2 GHz; BiCMOS technology; CMOS; bandwidth enhancement; bit error rate; frequency response behavior; integrated circuits; low-pass filter; matching networks; parasitic capacitances; passive networks; photodiode capacitance; trans-resistance gain; transfer function; transimpedance amplifier; wide-band amplifiers; Band pass filters; Bandwidth; BiCMOS integrated circuits; CMOS technology; Frequency response; Isolation technology; Low pass filters; Parasitic capacitance; Passive networks; Transfer functions; Bandwidth enhancement; TIA; integrated circuits; low-pass filter; matching networks; passive networks; transimpedance amplifier; wide-band amplifiers;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2004.831783
