DocumentCode :
1043535
Title :
An analytical expression for the multiplication factor M in semiconductors with equal ionization coefficients
Author :
Spirito, P.
Volume :
19
Issue :
8
fYear :
1972
fDate :
8/1/1972 12:00:00 AM
Firstpage :
951
Lastpage :
953
Abstract :
An analytical approximation of the multiplication factor 
is derived for linear and abrupt junctions for the case of equal electron and hole ionization rates. The results are compared with the exact multiplication curve for different abrupt and linear GaAs junctions and the relative errors are plotted.
is derived for linear and abrupt junctions for the case of equal electron and hole ionization rates. The results are compared with the exact multiplication curve for different abrupt and linear GaAs junctions and the relative errors are plotted.Keywords :
Charge carrier processes; Doping; Electric breakdown; Gallium arsenide; Ionization; Joining processes; Time measurement;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1972.17524
Filename :
1476995
Link To Document :
