Title :
A 21.5/43-GHz dual-frequency balanced Colpitts VCO in SiGe technology
Author :
Bao, Mingquan ; Li, Yinggang ; Jacobsson, Harald
Author_Institution :
Microwave & High Speed Electron. Res. Center, Molndal, Sweden
Abstract :
A balanced Colpitts voltage-controlled oscillator (VCO) is designed and fabricated in a commercially available 0.25-μm SiGe BiCMOS process. It has the characteristics of the push-push VCO, i.e., the VCO has simultaneously a differential output at a fundamental frequency of 21.5 GHz and a single-ended output at the second harmonic frequency of 43 GHz. A differential tuning technique is applied to reduce the phase noise. The measured phase noise at 1-MHz offset is -113 dBc/Hz at 21.5 GHz and -107 dBc/Hz at 43 GHz. The corresponding output power is about -6 and -17 dBm, respectively, with a 5% tuning range and a 130-mW dc power consumption.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MIMIC; MMIC oscillators; integrated circuit design; voltage-controlled oscillators; 0.25 micron; 130 mW; 21.5 GHz; 43 GHz; BiCMOS process; SiGe; SiGe technology; dc power consumption; differential output; differential tuning; dual-frequency balanced Colpitts VCO; phase noise reduction; push-push VCO; second harmonic frequency; single-ended output; voltage-controlled oscillator; BiCMOS integrated circuits; Frequency; Germanium silicon alloys; Noise measurement; Phase measurement; Phase noise; Power generation; Silicon germanium; Tuning; Voltage-controlled oscillators; Phase noise; SiGe BiCMOS; VCO; voltage-controlled oscillator;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2004.831482