The physical analysis of laminated ferrite wafer individual storage element

Physical processes in a laminated ferrite wafer (LFW) storage element are considered. A mathematical technique for calculating the flux reversal processes of the storage element is proposed. The technique makes it possible to evaluate the effect of the address write current on the output signal quantitatively. The problem of the digit current influence on the storage element performance is considered. The threshold value of this current is shown to be determined by the coercitive force of the ferrite times the cross-section perimeter of the digit line.