Approaching intraband relaxation rates in the high-speed modulation of semiconductor lasers

Author

Chow, Weng W. ; Vawter, G. Allen ; Guo, Junpeng

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

40

Issue

8

fYear

2004

Firstpage

989

Lastpage

995

Abstract

This paper uses a nonequilibrium semiconductor laser model to investigate high-modulation bandwidth operation in semiconductor lasers. In particular, limitations to ≳100GHz modulation response, which approaches the carrier-phonon scattering rate, are analyzed. It is found that plasma heating leads to a dynamic carrier population bottleneck, which limits scaling of modulation bandwidth. An optical injection scheme is proposed to verify this phenomenon experimentally.

Keywords

carrier relaxation time; electro-optical modulation; electron-phonon interactions; high-speed optical techniques; laser theory; semiconductor device models; semiconductor lasers; carrier-phonon scattering rate; dynamic carrier population bottleneck; high-modulation bandwidth operation; high-speed modulation; intraband relaxation rates; nonequilibrium semiconductor laser model; optical injection scheme; plasma heating; semiconductor lasers; Bandwidth; Equations; High speed optical techniques; Laser modes; Laser theory; Optical modulation; Optical scattering; Particle scattering; Quantum well lasers; Semiconductor lasers; Hot carriers; laser theory; nonequilibrium laser dynamics; optical modulation; quantum-well lasers; semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2004.831627

Filename

1317078