Author :
Choa, F.S. ; Tsang, W.T. ; Logan, R.A. ; Gnall, R.P. ; Koren, U. ; Koch, T.L. ; Burrus, C.A. ; Wu, Ming C. ; Chen, Y.K. ; Sciortino, P.F. ; Sergent, A.M. ; Corvini, P.J.
Abstract :
The fabrication and performance of InGaAs/InGaAsP multiquantum well distributed-Bragg-reflector lasers grown by chemical beam epitaxy are reported. Use of a long and weak grating, which was made on a thin and uniformly grown quaternary layer has enabled the grating coupling constant kappa to be well controlled. For most of the lasers the measured linewidths are below 10 MHz. A record high sidemode suppression ratio of 58.5 dB was obtained.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; semiconductor quantum wells; 10 MHz; 58.5 dB; InGaAs-InGaAsP; MQW; chemical beam epitaxy; distributed-Bragg-reflector lasers; fabrication; grating coupling constant; linewidths; long grating; multiquantum well; performance; semiconductors; sidemode-suppression-ratio; uniformly grown quaternary layer; weak grating;
