Using the MIS capacitor for doping profile measurements with minimal interface state error

Doping profiles can be measured to best advantage by using MIS capacitors when one is interested in the profile either very close to the semiconductor surface or in very heavily doped semiconductors. This paper shows both experimentally and theoretically that the major error caused by interface states can be minimized by using either the pulsed capacitance voltage technique or by the second-harmonic profiling technique. This makes possible profile measurements in MIS capacitors even with very large interface state densities, and makes it advantageous to use MIS capacitors for the express purpose of profile measurements. The minimization of interface state errors is contingent upon using a high enough measurement frequency. Moreover, the closer to the interface that the profile is desired, the higher the frequency must be. At high enough frequencies, the intrinsic resolution of the method allows accurate measurement of the doping profile only to within a few extrinsic Debye lengths of the Si-SiO2interface. Curves are presented indicating the closeness to the interface attainable within a 2 percent profile error as a function of measurement frequency, doping level, and temperature. Comparison of experimental measurements with theory on uniformly doped samples at 5 and 30 MHz substantiates our analysis of interface state effects. Finally, a nonuniform profile is measured to illustrate the method.