DocumentCode
1045121
Title
Pattern design of power transistors
Author
Kisaki, Hitoshi
Author_Institution
Fujitsu, Ltd., Kobe, Japan
Volume
20
Issue
4
fYear
1973
fDate
4/1/1973 12:00:00 AM
Firstpage
458
Lastpage
460
Abstract
The distribution of the emitter current density along the emitter stripe in the comb structure has been analytically obtained by taking into account the junction temperature and the sheet resistance of the diffused base layer, From this result the optimum length of the emitter stripe has been obtained.
Keywords
Atmospheric measurements; Contact resistance; Current density; Electrodes; Electrons; Pattern analysis; Power transistors; Pulse measurements; Silicon; Temperature distribution;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1973.17671
Filename
1477328
Link To Document