Title :
Continuous wave visible InGaP/InGaAlP quantum well surface emitting laser diodes
Author :
Tai, K. ; Huang, K.F. ; Wu, C.C. ; Wynn, J.D.
Author_Institution :
Chiao Tung Univ., Hsinchu, Taiwan
fDate :
7/22/1993 12:00:00 AM
Abstract :
Vertical cavity top surface emitting lasers in the 0.66 mu m visible spectral region were fabricated by the metal-organic chemical vapour deposition technique. The continuous wave threshold currents Ith are 3.9 and 4.6 mA at -75 and -25 degrees C, respectively, for 15 mu m diameter devices. The lasers can also be operated at room temperature, but only in a pulsed mode with an Ith of 12 mA at 25 degrees C.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser cavity resonators; semiconductor lasers; -75 to 25 degC; 15 micron; 3.9 to 12 mA; CW type; InGaP-InGaAlP; MOCVD; continuous wave threshold currents; laser diodes; metal-organic chemical vapour deposition; quantum well; surface emitting; vertical cavity; visible spectral region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930881
