Remarks of an Extensive Investigation on the Microwave HEMT Behavior Under Illumination

Author

Caddemi, Alina ; Crupi, Giovanni ; Fazio, E. ; Patane, S. ; Salvo, Giuseppe

Author_Institution

DICIEAMA, Univ. of Messina, Messina, Italy

Volume

24

Issue

2

fYear

2014

fDate

Feb. 2014

Firstpage

102

Lastpage

104

Abstract

This letter presents valuable remarks based on an extensive experimental study of the microwave behavior for a GaAs HEMT under CW infrared and visible laser exposure. The comparison of both dc and microwave (scattering and noise) parameters with and without illumination has highlighted that the device behavior is significantly affected by the light exposure. The observed optical effects can be ascribed to the threshold voltage shift originating from the internal photovoltaic effect. The light sensitivity has shown to be more pronounced at shorter wavelength.

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; laser beam effects; lighting; microwave field effect transistors; radiation hardening (electronics); CW infrared laser exposure; GaAs; GaAs HEMT; Illumination; dc parameters; internal photovoltaic effect; light exposure; light sensitivity; microwave HEMT behavior; microwave noise; microwave scattering; optical effects; threshold voltage shift; visible laser exposure; Gallium arsenide; HEMTs; Lighting; Logic gates; Masers; Microwave transistors; Noise; HEMT; microwave measurements; optical effects; radiation wavelength; threshold voltage shift;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2013.2290220

Filename

6678634