Title :
Conversion gain and intermodulation performance of a GaAs HBT 50-950 MHz upconvertor
Author :
Xavier, B.A. ; Aitchison, C.S. ; Collinson, G. ; Beech, G.
Author_Institution :
Brunel Univ., Uxbridge, UK
fDate :
7/22/1993 12:00:00 AM
Abstract :
The authors report the measured performance of a single ended GaAs heterojunction bipolar transistor (HBT) upconverting mixer from 50 to 950 MHz, showing a conversion gain of 19.4 dB and output intermodulation intercept point (OIP3) of +20.5 dBm with local oscillator drive power of 0 dBm. The measured results demonstrate the suitability of the HBT for use in low power consumption upconvertor circuits.
Keywords :
III-V semiconductors; frequency convertors; gallium arsenide; heterojunction bipolar transistors; intermodulation; mixers (circuits); solid-state microwave circuits; 19.4 dB; 50 to 950 MHz; GaAs; HBT; UHF; conversion gain; heterojunction bipolar transistor; intermodulation performance; low power consumption; upconverting mixer; upconvertor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930895
