DocumentCode :
1045360
Title :
Effect of strain on microwave noise characteristics in In0.52Al0.48As/InxGa1-xAs (0.53
Author :
Hong, Woo-Pyo ; Florez, L. ; Song, J.I.
Volume :
29
Issue :
15
fYear :
1993
fDate :
7/22/1993 12:00:00 AM
Firstpage :
1338
Lastpage :
1340
Abstract :
The RF noise characteristics of lattice-matched and strained In0.52Al0.48As/InxGa1-xAs HEMTs grown by MBE have been investigated. The indium composition of the InxGa1-xAs channel was varied from x=0.53 to 0.80. While the gain and speed performance were significantly improved with the increase of indium composition as expected, the noise characteristics showed that the microwave noise increases with the increase of the indium composition.
Keywords :
III-V semiconductors; aluminium compounds; deformation; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device noise; solid-state microwave devices; HEMTs; In composition; In 0.52Al 0.48As-In xGa 1-xAs; In xGa 1-xAs channel; MBE; RF noise characteristics; lattice-matched; microwave noise characteristics; strain;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930897
Filename :
274840
Link To Document :
