Title :
Temperature Dependence of Digital SET Pulse Width in Bulk and SOI Technologies
Author :
Shuming, Chen ; Bin, Liang ; Biwei, Liu ; Zheng, Liu
Author_Institution :
Coll. of Comput. Sci., Nat. Univ. of Defense Technol., Changsha
Abstract :
Using three-dimensional mixed-mode simulation, temperature dependence of digital SET pulse width in bulk and PD SOI inverter chains has been studied. It was found that temperature has a very important impact on digital SET. Using a LET of 60 MeVmiddotcm2 /mg, when temperature rises from -55 to 125degC , the digital SET pulse width in bulk and floating SOI inverter chains rises remarkably, while in a SOI inverter chain with ideal body tie, the digital SET pulse width is almost constant with rising temperature. Detailed analysis showed that pulse broadening with rising temperature is primarily due to enhancement of bipolar amplification.
Keywords :
CMOS digital integrated circuits; invertors; silicon-on-insulator; CMOS technologies; SOI inverter chains; bipolar amplification; bulk technologies; digital SET pulse width; single event effects; temperature -55 degC to 125 degC; temperature dependence; three-dimensional mixed-mode simulation; Circuit simulation; Pulse amplifiers; Pulse inverters; Pulse width modulation inverters; Single event upset; Space vector pulse width modulation; Temperature dependence; Temperature distribution; Temperature sensors; Testing; Bipolar amplification; bulk and SOI inverter chains; digital SET; mixed-mode simulation;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.2006980