DocumentCode :
1045943
Title :
Characterisation of poly-Si/SiO2/Si
Author :
Fukuda, Hiroshi ; Hayashi, Teruaki ; Iwabuchi, T.
Volume :
29
Issue :
20
fYear :
1993
Firstpage :
1758
Lastpage :
1759
Abstract :
The structure of polycrystalline silicon (poly-Si)/SiO2/Si
Keywords :
elemental semiconductors; ellipsometry; semiconductor-insulator-semiconductor structures; silicon; silicon compounds; surface topography measurement; thickness measurement; Bruggeman effective medium approximation model; Si-SiO 2-Si; VASE results; composition; film thicknesses; polysilicon; top surface roughness; variable-angle spectroscopic ellipsometry;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19931171
Filename :
274899
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1045943
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