Title :
Changes of the four noise parameters due to general changes of linear two-port circuits
Author :
Hartmann, Karl ; Strutt, Max J.O.
Author_Institution :
Swiss Federal Institute of Technology, Zurich, Switzerland
fDate :
10/1/1973 12:00:00 AM
Abstract :
Transformation formulas for the four noise parameters are given as a function of the four scattering parameters. For example, the influence of the lead inductances of a microwave bipolar transistor is examined, showing new significant results. The described procedure is applicable to other semiconductor devices. Most of the general formulas in Section II are believed to be new.
Keywords :
Admittance; Bipolar transistors; Circuit noise; Microwave devices; Noise figure; Scattering parameters; Semiconductor device noise; Semiconductor device packaging; Semiconductor devices; Stability;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1973.17761
