Title :
Influence of the carrier concentration on the mode of high-field domains
Author :
Hasuo, Shinya ; Ohmi, Tadahiro ; Horimatsu, Tetsuo
Author_Institution :
Fujitsu Laboratories Ltd., Kawasaki, Japan
fDate :
10/1/1973 12:00:00 AM
Abstract :
From discussions on the behavior of the high-field domain, five different modes are shown to appear successively when changing the carrier concentration in material with a positive field derivative of the carrier-diffusion coefficient. Two of them are cyclically traveling modes whose traveling directions are opposite to each other. The others are trapped-domain modes, and they are classified by the positions in which they are trapped.
Keywords :
Computer simulation; Doping profiles; Electrons; Equations; Gallium arsenide; Indium phosphide; Semiconductor device doping; Semiconductor diodes; Space charge; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1973.17765
