• DocumentCode
    1046070
  • Title

    Influence of the carrier concentration on the mode of high-field domains

  • Author

    Hasuo, Shinya ; Ohmi, Tadahiro ; Horimatsu, Tetsuo

  • Author_Institution
    Fujitsu Laboratories Ltd., Kawasaki, Japan
  • Volume
    20
  • Issue
    10
  • fYear
    1973
  • fDate
    10/1/1973 12:00:00 AM
  • Firstpage
    903
  • Lastpage
    905
  • Abstract
    From discussions on the behavior of the high-field domain, five different modes are shown to appear successively when changing the carrier concentration in material with a positive field derivative of the carrier-diffusion coefficient. Two of them are cyclically traveling modes whose traveling directions are opposite to each other. The others are trapped-domain modes, and they are classified by the positions in which they are trapped.
  • Keywords
    Computer simulation; Doping profiles; Electrons; Equations; Gallium arsenide; Indium phosphide; Semiconductor device doping; Semiconductor diodes; Space charge; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1973.17765
  • Filename
    1477422
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1046070