• DocumentCode
    1046205
  • Title

    Investigation of emitter current crowding effect in heterojunction bipolar transistors

  • Author

    Fournier, V. ; Dangla, J. ; Dubon-Chevallier, C.

  • Author_Institution
    CNET, France Telecom, Bagneux, France
  • Volume
    29
  • Issue
    20
  • fYear
    1993
  • Firstpage
    1799
  • Lastpage
    1800
  • Abstract
    The emitter current crowding effect in heterojunction bipolar transistors (HBTs) has been investigated using a specific test device. This test device, which is a heterojunction bipolar transistor with two separate base fingers, also allows evaluation of the HBT base resistance. By using of this test device, the authors demonstrate that a 3 mu m large HBT does not exhibit the emitter current crowding effect. An analysis of the saturated regime is also presented.
  • Keywords
    heterojunction bipolar transistors; semiconductor device models; semiconductor device testing; Gummel-Poon model; HBT base resistance; emitter current crowding; heterojunction bipolar transistors; saturated regime; test device;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931197
  • Filename
    274925
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1046205