• DocumentCode
    1046554
  • Title

    The influence of surface potential fluctuations on the operation of the MOS transistor in weak inversion

  • Author

    Van Overstraeten, Roger J. ; Declerck, G. ; Broux, George L.

  • Author_Institution
    Katholieke Universiteit Leuven, Leuven, Belgium
  • Volume
    20
  • Issue
    12
  • fYear
    1973
  • fDate
    12/1/1973 12:00:00 AM
  • Firstpage
    1154
  • Lastpage
    1158
  • Abstract
    The classical theory of the MOS transistor operating in weak inversion, attributes the slope of the In IDversus VGcurve to the capture of minority carriers by surface states. The discrepancy between the Nssvalues given by this theory and by independentt surface states measuring techniques is explained by the influence of surface potential fluctuations. These fluctuations are caused by the statistical distribution of the oxide charge.
  • Keywords
    Current measurement; Density measurement; Fluctuations; Gaussian distribution; MOS capacitors; MOSFETs; Probability; Statistical distributions; Surface fitting; Virtual colonoscopy;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1973.17810
  • Filename
    1477467
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1046554