Title :
Corrections to “Zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [Nov 08 3001-3011]
Author :
Li, F.M. ; Gen-Wen Hsieh ; Dalal, Surjeet ; Newton, M.C. ; Stott, J.E. ; Hiralal, Pritesh ; Nathan, Arokia ; Warburton, P.A. ; Unalan, Husnu Emrah ; Beecher, P. ; Flewitt, Andrew J. ; Robinson, Ian ; Amaratunga, Gehan ; Milne, W.I.
Abstract :
In our paper [F.M. Li et al., 2008], two errors were noticed after the paper went to press. On page 3002, near the middle of the left column, it should say "In this method, zinc oxide and carbon powders are mixed together, usually in a ZnO:C ratio of 1: 1 or 1:4 by weight." In Fig. 8, on page 3005, the x-axis label should say "energy (eV)" instead of "wavelength (eV)." Also, this paper should have been designated as Invited, as it is now above.
Keywords :
high electron mobility transistors; high electron mobility nanocomposite thin film transistors; zinc oxide nanostructures; Electron devices; Electron mobility; Nanostructures; Notice of Violation; Optical films; Powders; Thin film transistors; Zinc oxide;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.2010442
