• DocumentCode
    1046871
  • Title

    Corrections to "MOSFET Degradation Under RF Stress"

  • Author

    Sasse, Guido T. ; Kuper, F.G. ; Schmitz, Jurriaan

  • Volume
    56
  • Issue
    1
  • fYear
    2009
  • Firstpage
    157
  • Lastpage
    157
  • Abstract
    In the paper "MOSFET Degradation Under RF Stress" by Guido T. Sasse, Fred G. Kuper, and Jurriaan Schmitz, the first author\´s affiliation should read, "G. T. Sasse carried out this work in the Group of Semiconductor Components, MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands. He is currently with NXP Semiconductors, Nijmegen, The Netherlands."
  • Keywords
    MOSFET; MOSFET degradation; RF stress;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2008.2010698
  • Filename
    4723896
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1046871